1994. 6. 24 1/3 semiconductor technical data KTC3198 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features excellent h fe linearity : h fe (2)=100(typ.) at v ce =6v, i c =150ma : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.). low noise : nf=1db(typ.). at f=1khz. complementary to kta1266. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification o:70 140, y:120 240, gr:200 400, bl:300~700 characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 50 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (1) (note) v ce =6v, i c =2ma 70 - 700 h fe (2) v ce =6v, i c =150ma 25 100 - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma - - 1.0 v transition frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf base intrinsic resistance rbb? v cb =10v, i e =1ma, f=30mhz - 50 - u noise figure nf v ce =6v, i c =0.1ma, rg=10k u , f=1khz - 1.0 10 db
1994. 6. 24 2/3 KTC3198 revision no : 0 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 30 dc current gain h fe 1k 300 100 0.3 0.1 collector current i (ma) c h - i 0.3 collector-emitter saturation 3 ce(sat) 0.01 300 100 30 0.1 collector current i (ma) c v - i 10 base current i ( a) 0.3 b 3k 0 base-emitter voltage v (v) be i - v 40 80 120 160 200 240 1234 567 common emitter ta=25 c 6.0 5.0 3.0 2.0 1.0 0.5 i =0.2ma 0 b fe c 1 3 10 30 50 100 300 500 10 ce(sat) c voltage v (v) 0.3 1 3 10 0.03 0.05 0.1 0.5 1 common emitter i /i =10 cb ta=100 c 25 c -25 c ce v =-10v ta=25 c common emitter 1k 500 100 50 30 -10 -3 -1 -0.3 transition frequency f (mhz) e t f - i e emitter current i (ma) -0.1 -30 -100 -300 10 t 3k 300 bbe 0.2 0.4 0.6 0.8 1.0 1.2 1 3 30 100 300 1k common v =6v ce emitter ta= 100 c ta= 25 c ta =-25 c common ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v emitter 0.1 5 3 1 0.5 30 10 3 1 c be(sat) v - i c collector current i (ma) 0.1 0.3 100 300 10 be(sat) base-emitter saturation 0.3 voltage v (v) b c i /i =10 ta=25 c common emitter
1994. 6. 24 3/3 KTC3198 revision no : 0 c p (mw) 0 collector power dissipation 0 ambient temperature ta ( c) pc - ta h parameter - i c collector current i (ma) 0.1 0.3 30 50 0.1 h parameter c 10 3 1 0.3 1 3 10 30 100 300 1k 2k common emitter f=270hz v =12v ta=25 c ce bl gr y o h fe bl bl bl gr gr gr y y y o o o ie h x h x h x k ? ie h x k ? h x oe 10 re -4 ce h parameter - v 2k 1k 300 100 30 10 3 1 0.3 h parameter 0.1 10 30 100 300 3 0.5 collector-emitter voltage v (v) ce 1 common emitter i =2ma ta=25 c f=270hz c bl gr y o fe h oe h -4 re 10 bl bl bl gr gr gr y y y o o o 25 50 75 100 125 150 175 100 200 300 400 500 600 700 ?
|
